stp6nk90z

1
2
3
TO-247
123
TAB
TO-220
1
3
TAB
D PAK
2
12
3
TO-220FP
D(2, TAB)
G(1)
S(3) AM01475V1
Features
Order codes VDS RDS(on)max. ID
STB6NK90ZT4
900 V 2 Ω 5.8 A
STP6NK90Z
STP6NK90ZFP
STW7NK90Z
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Zener-protected
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
Product status
STB6NK90ZT4
STP6NK90Z
STP6NK90ZFP
STW7NK90Z
N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET
in D2PAK, TO-220, TO-220FP and TO-247 packages
STB6NK90ZT4, STP6NK90Z
STP6NK90ZFP, STW7NK90Z
Datasheet
DS2985 - Rev 6 - April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com

1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
D2PAK, TO-220, TO-247 TO-220FP
VDS Drain-source voltage 900 V
VGS Gate-source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 5.8 5.8 (1) A
IDDrain current (continuous) at TC = 100 °C 3.65 3.65 (1) A
IDM (2) Drain current (pulsed) 23.2 23.2 A
PTOT Total dissipation at TC = 25 °C 140 30 W
dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C) - 2500 V
TjOperating junction temperature range
-55 to 150
°C
Tstg Storage temperature range °C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 5.8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS.
Table 2. Thermal data
Symbol Parameter
Value
Unit
D2PAK TO-220 TO-220FP TO-247
Rthj-case Thermal resistance junction-case 0.89 4.2 0.89 °C/W
Rthj-pcb Thermal resistance junction-pcb 60 °C/W
Rthj-amb Thermal resistance junction-ambient 62.5 50 °C/W
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 5.8 A
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical ratings
DS2985 - Rev 6 page 2/26

2Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source ID = 1 mA, VGS = 0 V 900 V
Breakdown voltage
IDSS Zero gate voltage drain
current
VGS = 0 V, VDS = 900 V 1 µA
VGS = 0 V, VDS = 900 V, TC = 125 °C (1) 50 µA
IGSS Gate body leakage
current VDS = 0 V, VGS = ±20 V ±10 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V
RDS(on) Static drain-source on
resistance VGS = 10 V, ID = 2.9 A 1.56 2 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V
1350
pF
Coss Output capacitance 130
Crss Reverse transfer
capacitance 26
Coss eq. (1) Equivalent output
capacitance VGS = 0 V, VDS = 0 V to 720 V 70 pF
td(on) Turn-on delay time
VDD = 450 V, ID = 3 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 17. Test circuit for
resistive load switching times and Figure
22. Switching time waveform)
17
ns
trRise time 20
tr(off) Turn-off delay time 45
trFall time 20
QgTotal gate charge VDD = 720 V, ID = 5.8 A, VGS = 0 to 10 V
(see Figure 18. Test circuit for gate charge
behavior)
46.5 60.5
nC
Qgs Gate-source charge 8.5
Qgd Gate-drain charge 25
tr(Voff) Off-voltage rise time VDD = 720 V, ID = 5.8 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 19. Test circuit for
inductive load switching and diode recovery
times)
11
ns
trFall time 12
tcCross-over time 20
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical characteristics
DS2985 - Rev 6 page 3/26

Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current 5.8
A
ISDM Source-drain current
(pulsed)
23.2
VSD Forward on voltage ISD = 5.8 A, VGS = 0 V 1.6 V
trr Reverse recovery time ISD = 5.8 A, di/dt = 100 A/µs
VDD = 36 V, Tj = 150 °C (see Figure
19. Test circuit for inductive load switching
and diode recovery times)
840 ns
Qrr Reverse recovery charge 5880 nC
IRRM Reverse recovery current 14 A
Table 7. Gate-source zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage Igs = ±1 mA, ID = 0 A ±30 V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical characteristics
DS2985 - Rev 6 page 4/26

2.1 Electrical characteristics curves
Figure 1. Safe operating area for TO-220/D2PAK
GADG260320180900MT
Figure 2. Thermal impedance for TO-220/D2PAK
GADG260320180901MT
Figure 3. Safe operating area for TO-220FP
GADG260320180902MT
Figure 4. Thermal impedance for TO-220FP
GADG260320180903MT
Figure 5. Safe operating area for TO-247
GADG260320180904MT
Figure 6. Thermal impedance for TO-247
GADG260320180905MT
STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z
Electrical characteristics curves
DS2985 - Rev 6 page 5/26