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datasheet 21195

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by MJ21195/D
SEMICONDUCTOR TECHNICAL DATA
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS
• Total Harmonic Distortion Characterized
• High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second
CASE 1–07
TO–204AA
(TO–3)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
250
Vdc
Collector–Base Voltage
VCBO
400
Vdc
Emitter–Base Voltage
VEBO
5
Vdc
Collector–Emitter Voltage – 1.5 V
VCEX
400
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
16
30
Adc
Base Current — Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
250
1.43
Watts
W/°C
TJ, Tstg
– 65 to +200
°C
Symbol
Max
Unit
RθJC
0.7
°C/W
Operating and Storage Junction Temperature Range
āā
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
VCEO(sus)
250
—
—
Vdc
ICEO
—
—
100
µAdc
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
—
—
100
µAdc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
—
—
100
µAdc
5
2.5
—
—
—
—
25
8
—
—
—
—
2.2
—
—
—
—
1.4
4
OFF CHARACTERISTICS
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, VCE = 5 Vdc)
hFE
75
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
THD
%
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2%
—
0.8
—
—
0.08
—
fT
4
—
—
MHz
Cob
—
—
500
pF
f T, CURRENT BANDWIDTH PRODUCT (MHz)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VCE = 10 V
5V
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
2
NPN MJ21196
f T, CURRENT BANDWIDTH PRODUCT (MHz)
PNP MJ21195
10
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10 V
VCE = 5 V
TJ = 25°C
ftest = 1 MHz
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
Motorola Bipolar Power Transistor Device Data
10
TYPICAL CHARACTERISTICS
PNP MJ21195
NPN MJ21196
1000
TJ = 100°C
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
1000
25°C
100
TJ = 100°C
100
25°C
– 25°C
– 25°C
VCE = 20 V
VCE = 20 V
10
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
100
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
PNP MJ21195
NPN MJ21196
1000
TJ = 100°C
100
h FE , DC CURRENT GAIN
1000
h FE , DC CURRENT GAIN
1.0
10
IC, COLLECTOR CURRENT (AMPS)
25°C
– 25°C
TJ = 100°C
100
25°C
– 25°C
VCE = 5 V
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
PNP MJ21195
NPN MJ21196
30
30
25
IC, COLLECTOR CURRENT (A)
IB = 2 A
IC , COLLECTOR CURRENT (A)
VCE = 5 V
10
1.5 A
20
1A
15
0.5 A
10
5.0
IB = 2 A
1.5 A
25
1A
20
0.5 A
15
10
5.0
TJ = 25°C
TJ = 25°C
0
0
0
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
Motorola Bipolar Power Transistor Device Data
25
0
5.0
10
15
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
25
Figure 8. Typical Output Characteristics
3
TYPICAL CHARACTERISTICS
PNP MJ21195
NPN MJ21196
1.6
TJ = 25°C
IC/IB = 10
2.5
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
3.0
2.0
1.5
VBE(sat)
1.0
VCE(sat)
0.5
TJ = 25°C
IC/IB = 10
1.4
1.2
VBE(sat)
1.0
0.8
0.6
VCE(sat)
0.4
0.2
0
0
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
0.1
Figure 9. Typical Saturation Voltages
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
NPN MJ21196
TJ = 25°C
VCE = 5 V (DASHED)
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 11. Typical Base–Emitter Voltage
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE–EMITTER VOLTAGE (VOLTS)
PNP MJ21195
10
1.0
100
10
TJ = 25°C
VCE = 5 V (DASHED)
1.0
VCE = 20 V (SOLID)
0.1
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
Figure 12. Typical Base–Emitter Voltage
IC , COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
10 ms
50 ms
10
1 sec
250 ms
1.0
TJ = 25°C
0.1
1.0
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
10000
10000
Cib
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
Cib
1000
Cob
1000
TJ = 25°C
ftest = 1 MHz
TJ = 25°C
ftest = 1 MHz
100
Cob
100
0.1
1.0
10
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21195 Typical Capacitance
Figure 15. MJ21196 Typical Capacitance
100
1.2
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 Ω
DUT
0.5 Ω
0.5 Ω
8.0 Ω
DUT
–50 V
Figure 17. Total Harmonic Distortion Test Circuit
Motorola Bipolar Power Transistor Device Data
5
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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6
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Motorola Bipolar Power Transistor DeviceMJ21195/D
Data
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